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| TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8211 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 25 m (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 20 5.5 22 1.5 W PD(2) 1.1 Unit V V V A Drain power dissipation (t = 10 s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) JEDEC JEITA TOSHIBA 2-6J1E Weight: 0.08 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) PD (1) 0.75 W Circuit Configuration 8 7 6 5 PD (2) EAS IAR EAR Tch Tstg 0.45 Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 39.3 5.5 0.1 150 -55 to 150 mJ A mJ C C 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2007-01-16 TPC8211 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) 114 C/W 167 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 278 Marking (Note 6) TPC8211 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 5.5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: * on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year, sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2007-01-16 TPC8211 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSS Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr RL = 5.0 10 V VGS 0V 4.7 ID = 3 A VOUT 11 ns 9 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3 A VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min -- 30 15 1.3 3.5 Typ. 31 25 7.0 1250 155 170 5 Max 10 10 2.5 44 36 pF Unit A A V V m S Turn-ON time Switching time Fall time ton tf toff Qg Qgs Qgd VDD 15 V - Duty < 1%, tw = 10 s = Turn-OFF time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge 63 25 20 5 nC VDD 24 V, VGS = 10 V, ID = 5.5 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition -- IDR = 5.5 A, VGS = 0 V Min -- -- Typ. -- -- Max 22 -1.2 Unit A V Forward voltage (diode) 3 2007-01-16 TPC8211 ID - VDS 5 10 8 4 5 4 3 2.9 3.2 2.8 Common source Ta = 25C Pulse test 10 10 8 5 4 3.5 3.2 ID - VDS 3.1 Common source Ta = 25C Pulse test 3 2.9 6 2.8 4 2.7 2.6 2 VGS = 2.4 V 0 0 8 (A) ID 3 2.6 2 Drain current 2.5 2.4 VGS = 2.3 V 1 0 0 0.2 0.4 0.6 0.8 1.0 Drain current ID (A) 2.7 0.4 0.8 1.2 1.6 2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 12 Common source VDS = 10 V Pulse test 1.0 VDS - VGS Common source Ta = 25C Pulse test (V) 100 Ta = -55C 25 10 0.8 8 ID VDS Drain-source voltage 0.6 0.4 0.2 Drain current (A) 6 4 2 5.5 3 ID = 1.5A 4 8 12 16 20 0 0 1 2 3 4 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 1000 RDS (ON) - ID Common source Ta = 25C Pulse test Forward transfer admittance Yfs (S) -55C 10 25C Ta = 100C Drain-source ON resistance RDS (ON) (m) 100 VGS = 4.5 V VGS = 10 V 10 1 Common source VDS = 10 V Pulse test 0.1 0.1 1 10 100 1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 4 2007-01-16 TPC8211 RDS (ON) - Ta 60 Common source VGS = 4.5 V ID = 5.5, 3, 1.5 A 10 V Pulse test 100 Common source Ta = 25C Pulse test 10 10 5 IDR - VDS 40 Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (m) 50 30 ID = 5.5, 3, 1.5 A 3 1 VGS = 0 V 20 1 10 0 -80 -40 0 40 80 120 160 0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 2.5 Vth - Ta (V) (pF) 1000 Coss 2.0 Vth Gate threshold voltage 1.5 1.0 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 80 120 160 10 100 Ciss Capacitance C 100 Common source Ta = 25C f = 1 MHz VGS = 0 V 1 Crss 10 0.1 Drain-source voltage VDS (V) Ambient Temperature Ta (C) PD - Ta 2.0 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s Dynamic input/output characteristics 30 Common source Ta = 25C VDS ID = 5.5 A Pulse test 20 VDD = 24 V 15 12 10 6 5 12 5 6 VDD = 24 V 10 15 20 30 (W) (V) PD Drain power dissipation Drain-source voltage 1.0 (3) 0.5 (4) 0 0 50 100 150 200 0 0 10 20 30 0 40 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2007-01-16 Gate-source voltage (2) VDS 1.5 (1) VGS (V) 25 25 TPC8211 rth - tw 1000 Single pulse (4) (3) (C/W) (2) (1) 100 Transient thermal impedance rth 10 1 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 Single-device value at dual operation (Note 3b) ID max (Pulse) * (A) 1 ms* 10 10 ms* Drain current ID 1 * Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1 0.1 0.1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2007-01-16 TPC8211 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2007-01-16 |
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